Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region
Source abstract
Abstract
A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 µm and 1.55 µm, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys’ precise compositions and bandgap values were confirmed using high-resolution x-ray diffraction and photoluminescence, to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1−x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure, which we present in detail.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Optical Coatings and Gratings · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic and Electrical Engineering, University College London, UCL 1 , Torrington Place, London WC1E 7JE, United Kingdom
Valencia Nanophotonics Technology Center, Universitat Politècnica de València 2 , Camino de Vera, s/n 46022, Spain
Department of Chemical Engineering, University College London, UCL 3 , Torrington Place, London WC1E 7JE, United Kingdom
Funding
H2020 Industrial Leadership
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