Chemical diffusion in amphoteric oxide semiconductors
Source abstract
Abstract
The present work considers the effect of oxygen activity on the chemical diffusion coefficient in terms of defect disorder and the related semiconducting properties. The transport kinetics under a chemical potential gradient in amphoteric oxide semiconductors exhibits a complex dependence within the n–p transition. It is shown that the effect may be related to the concentration of electronic charge carriers. The derived analytical form explains the empirical relationship between the chemical diffusion coefficient and oxygen activity reported for TiO2.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Electronic and Structural Properties of Oxides · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. 10.1038/238037a010.1038/238037a0 ↗
2. 10.1149/1.212409210.1149/1.2124092 ↗
3. 10.1126/science.107503510.1126/science.1075035 ↗
4. 10.1021/jp048112q10.1021/jp048112q ↗
5. Bak T. · Int. J. Hydrogen Energy · 2002 · 27 · 991 —1022
6. Nowotny J. · Phys. Stat. B · 2005 · 242 · R91—R93
7. P. E. Childs and J. B. Wagner, Jr: in ‘Heterogeneous kinetics at elevated temperatures’, (ed. G. R. Belton and W. L. Worrell), 264–342; 1970, New York, Plenum Press.
8. 10.1063/1.291390710.1063/1.2913907 ↗
9. Nowotny M. K. · Phys. Stat. B · 2005 · 242 · R88—R90
10. M. K. Nowotny: ‘Defect disorder, electrical properties and chemical diffusion of TiO2 single crystal’, PhD thesis, School of Materials Science and Engineering, University of New South Wales, Sydney, 2006.
11. Wagner C. · Z. Physik. Chem. · 1933 · 2510.1515/zpch-1933-2105 ↗
12. 10.1016/0079-6786(75)90002-310.1016/0079-6786(75)90002-3 ↗
13. 10.1016/S0022-3697(02)00480-810.1016/S0022-3697(02)00480-8 ↗