Unconventional Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Fe ₃ GaTe ₂ /Pt Heterostructures

ABSTRACT Magnetoresistance in the 2D ferromagnetic van der Waals (vdW) Fe ₃ GaTe ₂ (FGT) has emerged as a new frontier in spintronics, with particular interest paid to the antisymmetric magnetoresistance (AsMR) effect due to its potential to realize multi‐state memory, promising for constructing energy‐efficient memory devices. However, the mechanism underlying the room‐temperature AsMR remains unresolved. Herein, a structural design of two completely isolated FGT nanoflakes, combined with measurement approaches using swapping electrodes and flipping device orientations, was used to clarify the physics of room‐temperature AsMR in vdW ferromagnetic FGT‐based systems. The results show the unambiguous presence of room‐temperature AsMR with four distinct resistance states in the FGT/Pt Hall bar devices. Spin‐momentum locking is identified in the vdW FGT‐based heterostructures and found to be responsible for the observed room‐temperature AsMR. The special design and magneto‐electric transport measurements rule out the magnetic domain wall–induced circulating currents and interface pinning as possible origins of AsMR. Further confirmation of this physical mechanism is provided by the distinctive configuration of two FGT nanoflakes separated by a micrometer‐scale gap. Overall, the physical mechanism of room‐temperature AsMR in vdW FGT/Pt heterostructures is experimentally confirmed, opening new avenues for low‐power room‐temperature spintronic devices.