Bias‐Engineered Synthetic Antiferromagnets Hosting Sub‐20 nm Zero‐Field Skyrmions at Room Temperature

ABSTRACT Synthetic antiferromagnetic skyrmions (SAFsk) are nanoscale, topologically protected spin textures with strong potential for spintronic technologies because of their high stability and the absence of the skyrmion Hall effect. However, robust zero‐field stabilization remains a central challenge. Here, a synthetic antiferromagnetic (SAF) bias system is introduced as a novel strategy to stabilize both ferromagnetic skyrmions (FMsk) and SAFsk at zero field. Ferromagnetic (FM) and SAF multilayers are designed, fabricated and integrated with the SAF bias system to enable controlled skyrmion stabilization and polarity setting via multilayer design and a preparatory field cycle. Combining quantitative and high‐sensitivity magnetic force microscopy (MFM) with micromagnetic modeling, reliable zero‐field skyrmion formation is demonstrated and sub‐20 nm SAFsk are directly observed, the smallest SAFsk reported to date. Moreover, the SAF bias system concept introduced here offers a robust and scalable route to bias future skyrmion multilayers, as its compensated nature suppresses domain formation and preserves a uniform exchange field.