journal article·2026-06Open access

Manipulating Atomic Disorder and Mesoscale Architectures for High‐Efficiency Thermoelectric Modules

Jiwu Xin, Bo Wang, Chengyun Xu, Wang Li, Pengyu Zhang, Dongwang Yang, Yongke Wang, Jinfeng Dong, Lei Wei, Ting Zhang, Qinghui Jiang

Advanced Science· Volume 13· Issue 33

Abstract

ABSTRACT Decoupling electron and phonon transport remains the central challenge in designing high‐performance thermoelectric materials for low‐grade heat recovery. Conventional optimization strategies for Bi 2 Te 3 ‐based alloys typically isolate defect engineering from microstructure modulation, often leading to performance trade‐offs. Here, we demonstrate a strategy that simultaneously manipulates atomic disorder and mesoscale architectures via an in situ solid‐state reaction in p‐type Bi 0.5 Sb 1.5 Te 3 . By incorporating PbTiO 3 precursors, we trigger a thermodynamically driven reaction: at the atomic scale, Pb atoms substitutionally occupy Sb sites to induce chemical disorder and optimize the Fermi level; at the mesoscale, residual Ti species segregate to form PbTiO 3 @TiO 2 core–shell precipitates. This hierarchical structural engineering acts as a frequency‐selective barrier, drastically reducing lattice thermal conductivity without compromising carrier mobility. Consequently, the 0.5 mol% composite achieves a peak figure of merit of 1.47 at 333 K. Translating this material‐level breakthrough into a device, we fabricated a thermoelectric module that delivers a conversion efficiency of ∼7% and an output power of 13.1 mW under a temperature difference of 180 K. This work establishes a generalizable protocol for functionalizing thermoelectric systems via coupled defect chemistry and interface engineering, bridging the gap between fundamental transport physics and practical energy harvesting.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Nanowire Synthesis and Applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Materials Processing and Die and Mould Technology Huazhong University of Science and Technology Wuhan P. R. China

School of Electrical and Electronic Engineering Nanyang Technological University Singapore Singapore

Hangzhou International Innovation Institute Beihang University Hangzhou P. R. China

Institute of Engineering Thermophysics Chinese Academy of Sciences Beijing P. R. China

School of Materials Science and Engineering Nanyang Technological University Singapore Singapore

Engineering Department University of Miami Miami USA

University of Chinese Academy of Sciences Nanjing P. R. China

School of Microelectronics Wuhan Textile University Wuhan China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Royal Society

References (42)

Show source-provided references
1. 10.1126/science.adr845010.1126/science.adr8450 ↗
2. 10.1038/s41563‐025‐02223‐910.1038/s41563‐025‐02223‐9 ↗
3. 10.1038/s41893‐022‐01003‐610.1038/s41893‐022‐01003‐6 ↗
4. 10.1126/science.adt083110.1126/science.adt0831 ↗
5. 10.1126/science.ads586810.1126/science.ads5868 ↗
6. 10.1126/science.ado113310.1126/science.ado1133 ↗
7. 10.1093/nsr/nwaf22710.1093/nsr/nwaf227 ↗
8. 10.1039/D3EE00128H10.1039/D3EE00128H ↗
9. 10.1016/j.scib.2023.12.01610.1016/j.scib.2023.12.016 ↗
10. 10.1038/s41467‐024‐49440‐510.1038/s41467‐024‐49440‐5 ↗
11. 10.1038/s41467‐024‐45092‐710.1038/s41467‐024‐45092‐7 ↗
12. 10.1016/j.scib.2023.05.02610.1016/j.scib.2023.05.026 ↗
13. 10.1021/acs.jpcc.5b0417510.1021/acs.jpcc.5b04175 ↗
14. 10.1016/j.scriptamat.2006.04.01210.1016/j.scriptamat.2006.04.012 ↗
15. 10.1016/j.jallcom.2020.15462510.1016/j.jallcom.2020.154625 ↗
16. 10.1016/j.scriptamat.2017.10.00910.1016/j.scriptamat.2017.10.009 ↗
17. 10.1016/j.mtphys.2018.07.00210.1016/j.mtphys.2018.07.002 ↗
18. 10.1016/j.jallcom.2017.01.34010.1016/j.jallcom.2017.01.340 ↗
19. 10.1063/1.481707410.1063/1.4817074 ↗
20. 10.1016/j.jallcom.2011.01.15510.1016/j.jallcom.2011.01.155 ↗
21. 10.1016/j.jallcom.2016.10.07610.1016/j.jallcom.2016.10.076 ↗
22. 10.1063/1.498491410.1063/1.4984914 ↗
23. 10.1016/j.intermet.2016.11.00210.1016/j.intermet.2016.11.002 ↗
24. 10.1039/D2EE00119E10.1039/D2EE00119E ↗
25. 10.1002/adfm.20200968110.1002/adfm.202009681 ↗
26. 10.1016/j.joule.2024.05.00610.1016/j.joule.2024.05.006 ↗
27. 10.1039/C9EE02044F10.1039/C9EE02044F ↗
28. 10.1039/C8EE00290H10.1039/C8EE00290H ↗
29. 10.1002/smll.20220135210.1002/smll.202201352 ↗
30. 10.1002/adma.20230033810.1002/adma.202300338 ↗
31. 10.1039/C6EE02017H10.1039/C6EE02017H ↗
32. 10.1039/D0EE01349H10.1039/D0EE01349H ↗
33. 10.1038/s41467‐022‐34227‐310.1038/s41467‐022‐34227‐3 ↗
34. 10.1038/s41467‐018‐06682‐410.1038/s41467‐018‐06682‐4 ↗
35. 10.1002/adma.20090058710.1002/adma.200900587 ↗
36. 10.1038/nmat209010.1038/nmat2090 ↗
37. 10.1002/jcc.2105710.1002/jcc.21057 ↗
38. 10.1103/PhysRevB.76.07520110.1103/PhysRevB.76.075201 ↗
39. 10.1063/1.490824410.1063/1.4908244 ↗
40. 10.1023/B:JMSC.0000013880.59790.a310.1023/B:JMSC.0000013880.59790.a3 ↗
41. 10.1021/jp310865510.1021/jp3108655 ↗
42. 10.1016/j.nanoen.2015.02.00110.1016/j.nanoen.2015.02.001 ↗