Layer‐Dependent Antiferromagnetic Chern and Axion Insulating States in UOTe

ABSTRACT Magnetic topological insulators have received significant interest due to their dissipationless edge states, which promise advances in energy‐efficient electronic transport. However, the magnetic topological insulator state has typically been found in ferromagnets (FMs) that suffer from low magnetic ordering temperatures and stray fields. Identifying an antiferromagnetic topological insulator that exhibits the quantum anomalous Hall effect (QAHE) with a relatively high Néel temperature has been a longstanding challenge. Here, we focus on the recently discovered van der Waals (vdW) antiferromagnet (AFM) UOTe, which not only features a high Néel temperature (≈ 150K) but also exhibits intriguing Kondo interaction and topological characteristics. Our systematic analysis of the layer‐dependent topological phases based on ab initio computations predicts the two‐layer UOTe film to be an ideal 2D AFM Chern insulator in which the Hall conductivity is quantized with a fully compensated spin magnetization. By applying an in‐plane strain or electric field, we show how the itinerancy of U‐5f electrons can be manipulated to trigger a transition between the nontrivial ( C = 1) and trivial ( C = 0) phases. Interestingly, the three‐layer UOTe film is found to have zero charge conductance but it hosts a quantized spin Hall conductivity (SHC) with finite magneto‐electric coupling, suggesting the presence of an axion insulator‐like state. The unique magnetic structure of UOTe supports a layer‐tunable topology in which films with an odd number of layers are axion‐like insulators, while films with an even number of layers are Chern insulators, and the bulk material is a Dirac semimetal. Our study offers a new intrinsic AFM materials platform for realizing correlated topological phases for next‐generation spintronics applications and fundamental science studies.