Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall (Adv. Sci. 19/2025)
Source abstract
Abstract
Light Emitting Diodes Microwire LEDs offer high luminance and superior pixel density per inch, making them ideal for next-generation displays. Strain mapping and finite element simulation reveal that interfacial shear strain arises at traction-free surface of microwire LEDs to assist the elastic relaxation of the misfit strain in InGaN/GaN multiple quantum wells. More details can be found in article number 2408736 by Seunghwa Ryu, Sang Ho Oh, and co-workers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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