Ultra‐Low Threshold Resonance Switching by Terahertz Field Enhancement‐Induced Nanobridge (Adv. Sci. 1/2025)

Terahertz Field Enhancement-Induced Nanobridge The unique nanobridge crossing the entire induced current channel of a metamaterial could be realized by the strongly localized and enhanced terahertz light with the great assistance of a long slot type resonator with nanotips under ultralow threshold. In article number 2405225 by Myung-Ki Kim, Minah Seo, and co-workers, a novel phenomenon known as carrier multiplication, which induces resonance switching, is observed. Such discovery carries the potential for significant implications and insights into advanced terahertz technologies.