Controlling the Formation of Conductive Pathways in Memristive Devices (Adv. Sci. 33/2022)

Memristive Devices Sketch of oxygen vacancy segregation toward a specific grain boundary in a hafnia (Hf) based memristor. The orange pillars correspond to atomic positions of Hf calculated based on transmission electron microscopy imaging. The water symbolizes oxygen vacancies attracted (through a waterfall) to the grain boundary region (canyon), which will then form the speedway (Autobahn) of the filamentary conductive current. More details can be found in article number 2201806 by Leopoldo Molina‐Luna, Lambert Alff, and co‐workers. [Image: see text]