Contents: (Adv. Sci. 8/2016)
Source abstract
Abstract
Large-sized MoS 2 crystals can be grown on SiO 2 /Si substrates via a two-stage chemical vapor deposition method.The maximum size of MoS 2 crystals can be up to about 305 µm.The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions.The electron mobility of the MoS 2 crystals can reach ≈30 cm 2 V -1 s -1 , which is comparable to those of exfoliated fl akes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Diverse Scientific and Economic Studies · Academic Publishing and Open Access · Digital Media and Visual Art
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