Heterostructures: Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure (Adv. Sci. 11/2019)
Source abstract
Abstract
In article number 1900213, Ye Zhou, Su-Ting Han, and co-workers demonstrate a photo-induced transition from oxygen vacancy filament to metal filament in the heterostructure of titanium oxides/graphene. A voltage controlled negative differential resistance effect is also obtained. This will provide significant insight into the design and manipulation of memristive devices based on heterostructured materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
Shenzhen Key Laboratory of Flexible Memory Materials and Devices College of Electronic Science and Technology Shenzhen University Shenzhen Guangdong 518060 P. R. China
Institute for Advanced Study Shenzhen University Shenzhen Guangdong 518060 P. R. China
College of Chemistry and Environmental Engineering Shenzhen University Shenzhen Guangdong 518071 P. R. China
References
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