Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
Source abstract
Abstract
Novel, P-doped, flexible SiC field emitters, with both low turn-on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co-workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene and Nanomaterials Applications
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Affiliations
Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China
School of Material Science and Engineering China University of Mining and Technology Xuzhou City 221116 P.R. China
Department of Materials Science Fudan University Shanghai 200433 P. R. China
References
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