Ab Initio Molecular Dynamics: Disorder Control in Crystalline GeSb2Te4 Using High Pressure (Adv. Sci. 8/2015)
Source abstract
Abstract
The anti-site migrations of a prototypical phase-change material under pressure are investigated by M. Xu, M Wuttig, and co-workers in article number 1500117. The phase-change material GeSb2Te4 contains abundant vacancies. When subjected to a medium pressure, the vacancies may be occupied by adjacent Te atoms, followed by Sb atoms to fill the Te sites, forming “anti-site Sb/Te pairs”, increasing the disorder of the lattice and inducing localized electronic states in the energy bands.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Crystal Structures and Properties
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Affiliations
Institute of Physics (IA) RWTH Aachen University Aachen 52074 Germany
Institute for Theoretical Solid State Physics RWTH Aachen University Aachen 52074 Germany
JARA‐FIT and JARA‐HPC RWTH Aachen University Aachen 52056 Germany
References
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