High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)

Nanobeam Lasers In article number 2207611, Youngmin Kim, Donguk Nam, and co-workers report a scalable technique to produce identical on-chip lasers. The emission wavelengths of multiple GeSn nanolasers are precisely aligned by utilizing dynamically tunable strain engineering. This groundbreaking approach opens new avenues for realizing large-scale photonic-integrated circuits equipped with an array of indistinguishable light sources.