Regulating Te Vacancies through Dopant Balancing via Excess Ag Enables Rebounding Power Factor and High Thermoelectric Performance in p‐Type PbTe (Adv. Sci. 20/2021)
Source abstract
Abstract
Defect Engineering In article number 2100895, Yeon Sik Jung, Min‐Wook Oh, and co‐workers demonstrate the underlying defect chemistry on the rebounding power factor of an Na and Ag co‐doped PbTe. Excess Ag doping is proven to be effective to be the Te vacancy scavenger by forming interstitial Ag clusters, which is confirmed by advanced STEM and in situ characterizations. [Image: see text]
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices
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