Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022)

Conductive‐Bridge Phase‐Change Memory In article number 2103478, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma, and co‐workers design a conductive‐bridge phase‐change memory, forming self‐patterned heterogeneous networks of crystalline and amorphous nanodomains. The switching proceeds via forming/breaking nanobridges that link up the crystalline domains into a conductive path, resulting in ultralow power consumptions for memory programming. [Image: see text]