journal article·2026-02Open access

Broadband All‐Optical Memtransistor Based on Organic Cocrystals for Noise‐Robust Motion Recognition

Zhaohui Cai, Yuxiao Fang, Wenjie Du, Zhengjun Liu, Yingli Shi, Jiahua Luo, Rui Wu, Lixing Kang, Chun Zhao

Advanced Science· Volume 13· Issue 8

Abstract

Abstract All‐optical artificial synaptic devices offer promising potential for neuromorphic computing, yet their development is hindered by limited spectral tunability and poor plasticity linearity. Here, a broadband all‐optical synaptic memtransistor based on organic charge transfer cocrystals (DTT‐TCNQ) is reported, which enables fully light‐driven and reversible modulation of synaptic weights across a wide wavelength range (395–808 nm). The device exhibits bidirectional excitatory and inhibitory photoresponses, and achieves highly linear long‐term potentiation and depression (LTP/LTD) characteristics with ultralow nonlinearity (α p = 0.00191, α d = 0.00305) and asymmetry ratio (AR = 0.00114), attributed to a synergistic strategy combining frequency modulation and photoelectric coupling. When integrated into a convolutional neural long short‐term memory network (CNN‐LSTM) hybrid network, the device enables rapid convergence (98.77% accuracy in 6 training epochs) and robust recognition performance under spatiotemporal noise, outperforming conventional light‐write/electric‐erasing schemes. This work bridges material‐level innovation and system‐level functionality, offering a scalable approach toward energy‐efficient, noise‐resilient neuromorphic vision systems.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Mechanical and Optical Resonators

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Advanced Technology Xi'an Jiaotong‐Liverpool University Suzhou 215123 P. R. China

Suzhou Laboratory Suzhou 215000 P. R. China

Department of Electrical Engineering and Electronics University of Liverpool Liverpool L69 3BX UK

Suzhou Institute for Advanced Research University of Science and Technology of China Suzhou 215123 P. R. China

School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China Hefei 230026 P. R. China

Advanced Materials Division Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou 215123 P. R. China

Funding

National Natural Science Foundation of China

References (57)

Show source-provided references
1. 10.1002/aisy.20200009910.1002/aisy.202000099 ↗
2. 10.1038/s41467-025-56814-w10.1038/s41467-025-56814-w ↗
3. 10.1002/aisy.20200011910.1002/aisy.202000119 ↗
4. 10.1038/s41566-020-00754-y10.1038/s41566-020-00754-y ↗
5. 10.1002/aelm.20160009010.1002/aelm.201600090 ↗
6. 10.1021/acsami.2c2016610.1021/acsami.2c20166 ↗
7. 10.1002/aisy.20200016210.1002/aisy.202000162 ↗
8. 10.1002/adfm.20240140310.1002/adfm.202401403 ↗
9. 10.1002/adma.20241078310.1002/adma.202410783 ↗
10. 10.1002/adfm.20210797310.1002/adfm.202107973 ↗
11. 10.1002/adma.20200420710.1002/adma.202004207 ↗
12. 10.1021/acsnano.0c0892110.1021/acsnano.0c08921 ↗
13. 10.1002/adfm.20230797110.1002/adfm.202307971 ↗
14. 10.1002/advs.20220016810.1002/advs.202200168 ↗
15. 10.1021/acsami.1c1433210.1021/acsami.1c14332 ↗
16. 10.1002/adfm.20210600010.1002/adfm.202106000 ↗
17. 10.1016/j.jallcom.2025.18046910.1016/j.jallcom.2025.180469 ↗
18. 10.1016/j.jallcom.2022.16410310.1016/j.jallcom.2022.164103 ↗
19. 10.3390/electronics1304072610.3390/electronics13040726 ↗
20. 10.1039/D4CE00701H10.1039/D4CE00701H ↗
21. 10.1039/D2CE01127A10.1039/D2CE01127A ↗
22. 10.1002/chem.20200264010.1002/chem.202002640 ↗
23. 10.1021/acs.jpclett.3c0041710.1021/acs.jpclett.3c00417 ↗
24. 10.1002/adma.20241858210.1002/adma.202418582 ↗
25. 10.1002/adma.20250004910.1002/adma.202500049 ↗
26. 10.1002/adma.20250636710.1002/adma.202506367 ↗
27. 10.1002/advs.20241431910.1002/advs.202414319 ↗
28. 10.1016/j.preteyeres.2009.05.00310.1016/j.preteyeres.2009.05.003 ↗
29. 10.1167/iovs.14-1571610.1167/iovs.14-15716 ↗
30. 10.1038/s41467-022-32762-710.1038/s41467-022-32762-7 ↗
31. 10.1016/j.neuroscience.2018.09.02610.1016/j.neuroscience.2018.09.026 ↗
32. 10.1002/admt.20210014410.1002/admt.202100144 ↗
33. 10.7498/aps.64.19310110.7498/aps.64.193101 ↗
34. 10.1103/PhysRevLett.108.22640310.1103/PhysRevLett.108.226403 ↗
35. 10.1080/0026894840807871410.1080/00268948408078714 ↗
36. 10.1021/am200363p10.1021/am200363p ↗
37. 10.1021/acs.cgd.1c0125510.1021/acs.cgd.1c01255 ↗
38. 10.1002/adma.20220538110.1002/adma.202205381 ↗
39. 10.1021/acs.chemmater.3c0241710.1021/acs.chemmater.3c02417 ↗
40. 10.1038/s41467-024-54845-310.1038/s41467-024-54845-3 ↗
41. 10.1063/1.512006910.1063/1.5120069 ↗
42. 10.1016/j.neulet.2018.05.00610.1016/j.neulet.2018.05.006 ↗
43. 10.1038/s41565-024-01790-310.1038/s41565-024-01790-3 ↗
44. 10.1002/adma.20240775110.1002/adma.202407751 ↗
45. 10.1002/adma.20230369910.1002/adma.202303699 ↗
46. 10.1002/adfm.20230400010.1002/adfm.202304000 ↗
47. 10.1002/adma.20230585710.1002/adma.202305857 ↗
48. 10.1002/adfm.20231498010.1002/adfm.202314980 ↗
49. 10.1038/s41467-023-37973-010.1038/s41467-023-37973-0 ↗
50. 10.1002/adma.20241078310.1002/adma.202410783 ↗
51. 10.1038/s41467-020-17849-310.1038/s41467-020-17849-3 ↗
52. 10.1038/s41563-017-0001-510.1038/s41563-017-0001-5 ↗
53. 10.1126/sciadv.adh988910.1126/sciadv.adh9889 ↗
54. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
55. 10.1063/1.338234410.1063/1.3382344 ↗
56. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
57. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗