Simultaneous Harvesting of Bipolar Plasmonic Hot Carriers for Boosting Photoconductivity in Ag Nanoprism‐Coupled Lateral Si p–n Junction (Adv. Sci. 23/2025)

Simultaneous Bipolar Hot-Carrier Harvesting The cover image illustrates a lateral Si p–n junction diode coupled with plasmonic Ag nanoprisms, capable of simultaneously capturing both hot electrons and hot holes. This innovative architecture exhibits unprecedented photoconductivity enhancement compared to devices that utilize single-polarity hot carriers, while also enabling precise control of hot-carrier injection efficiency through external bias. More details can be found in article number 2414654 by Moonsang Lee, Jeong Young Park, and co-workers.