Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold (Adv. Sci. 1/2025)

2D Tellurium Goes Memristive 2D tellurium showcases remarkable characteristics, including simplicity in its chemistry, structure, and synthesis, making it ideal for a wide range of applications. In article number 2406703, Christian Martella, Deji Akinwande, Alessandro Molle, and co-workers present the first memristor design utilizing nanoscaled tellurium, synthesized via vapor transport deposition at a temperature as low as 100 °C directly on gold substrates. This method ensures full compatibility with back-end-of-line processing.