journal article·2025-03Open access

Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle‐Resolved Photoemission Spectroscopy

Hanbo Xiao, Han Gao, Min Li, Fanqiang Chen, Qiao Li, Yiwei Li, Can Li, Meixiao Wang, Fangyuan Zhu, Lexian Yang, Shiyong Wang, Feng Miao, Yulin Chen, Cheng Chen, Bin Cheng, Jianpeng Liu, Zhongkai Liu

Advanced Science· Volume 12· Issue 11

Abstract

Abstract Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next‐generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial‐ and angle‐resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ≈20 meV. Theoretical calculations effectively capture the experimental observations. This investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene‐based electronic devices.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai 201210 P. R. China

Nanjing National Laboratory of Solid State Microstructures, School of Physics, Institute of Brain‐Inspired Intelligence, Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China

Institute for Advanced Studies Wuhan University Wuhan Hubei 430072 P. R. China

Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 P. R. China

Center for Transformative Science ShanghaiTech University Shanghai 201210 P. R. China

Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201204 P. R. China

State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics Tsinghua University Beijing 100084 P. R. China

Department of Physics, Clarendon Laboratory University of Oxford Parks Road Oxford OX1 3PU UK

Institute of Interdisciplinary Physical Sciences School of Science Nanjing University of Science and Technology Nanjing 210094 P. R. China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

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