DataVXAdvanced SciencePaper
journal article·2018-09Open access

Biomemory: Phototunable Biomemory Based on Light‐Mediated Charge Trap (Adv. Sci. 9/2018)

Ziyu Lv, Yan Wang, Zhonghui Chen, Long Sun, Junjie Wang, Meng Chen, Zhenting Xu, Qiufan Liao, Li Zhou, Xiaoli Chen, Jieni Li, Kui Zhou, Ye Zhou, Yu‐Jia Zeng, Su‐Ting Han, Vellaisamy A. L. Roy

Advanced Science· Volume 5· Issue 9
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Source abstract

Abstract

In article number 1800714, Ye Zhou, Su-Ting Han, Vellaisamy A. L. Roy, and co-workers report a phototunable carbon dots-silk based resistive random access memory device. Ultraviolet illumination triggers excitons generation and subsequent photogating effect stemmed from trapped electrons in the active layer, ultimately decreasing the SET voltage. The photo-enhanced charge trapping effect is considered to be in charge of the tunable resistive switching behavior.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · bioluminescence and chemiluminescence research

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Affiliations

College of Electronic Science and Technology Shenzhen University Shenzhen 518060 P. R. China

Department of Materials Science and Engineering and State Key Laboratory of Millimeter Waves City University of Hong Kong Tat Chee Avenue, Kowloon Hong Kong SAR 999077 China

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology 122 Luoshi Road Wuhan 430070 P. R. China

State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China

College of Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

References

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