Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)
Source abstract
Abstract
A high-performance selector is critical for X-point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co-workers present a threshold switching selector based on highly-ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extremely high selectivity (>109). Limited Ag migration into electrolyte and multiple weak Ag filaments formation/rupture contribute to the enhanced selector performance. Such a high-performance threshold switching selector may thus lead to innovative applications in circuits and systems, especially for X-point memory applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
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Affiliations
Institute of Microelectronics Tsinghua University Beijing 100084 China
State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China
Department of Electrical Engineering National Tsing Hua University Hsinchu 30013 Taiwan
References
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