Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl₂O₄ Quasi‐Quantum Well Structures

Abstract The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well‐shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi‐QW structure of Cr/ultrathin‐Fe/MgAl₂O₄(001)/Fe, in which the Cr quasi‐barrier layer confines Δ₁ up‐spin electrons to the Fe well, are prepared with perfectly lattice‐matched interfaces and atomic layer number control. Resonant peaks are clearly observed in the differential conductance of the MTJs due to the formation of QWs. Furthermore, enhanced tunnel magnetoresistance (TMR) peaks at the resonant bias voltages are realized for the MTJs at room temperature, i.e., it is observed that TMR ratios at specific and even high bias‐voltages (V_bias) are larger than zero‐bias TMR ratios for the MTJs with odd Fe atomic layers, in contrast to the earlier experimental studies. In addition, a new finding in this study is unique sign changes in the temperature coefficient of resistance (TCR) depending on the Fe thickness and V_bias, which is interpreted as a signature of the QW formation of Δ₁ symmetry electronic states. The present study suggests that the spin‐dependent resonant tunneling via the QWs formed in Cr/ultrathin‐Fe/MgAl₂O₄/Fe structures should open a new pathway to achieve a large TMR at practically high V_bias.