Single Photon Kilohertz Frame Rate Imaging of Neural Activity
Source abstract
Abstract
Abstract Establishing the biological basis of cognition and its disorders will require high precision spatiotemporal measurements of neural activity. Recently developed genetically encoded voltage indicators (GEVIs) report both spiking and subthreshold activity of identified neurons. However, maximally capitalizing on the potential of GEVIs will require imaging at millisecond time scales, which remains challenging with standard camera systems. Here, application of single photon avalanche diode (SPAD) sensors is reported to image neural activity at kilohertz frame rates. SPADs are electronic devices that when activated by a single photon cause an avalanche of electrons and a large electric current. An array of SPAD sensors is used to image individual neurons expressing the GEVI Voltron‐JF525‐HTL. It is shown that subthreshold and spiking activity can be resolved with shot noise limited signals at frame rates of up to 10 kHz. SPAD imaging is able to reveal millisecond scale synchronization of neural activity in an ex vivo seizure model. SPAD sensors may have widespread applications for investigation of millisecond timescale neural dynamics.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Fluorescence Microscopy Techniques · Advanced Optical Sensing Technologies · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Centre for Discovery Brain Sciences University of Edinburgh Edinburgh EH8 9XD UK
School of Engineering Institute for Integrated Micro and Nano Systems University of Edinburgh Edinburgh EH9 3JL UK
Simons Initiative for the Developing Brain University of Edinburgh Edinburgh EH8 9XD UK
Funding
Wellcome Trust · Engineering and Physical Sciences Research Council
References (27)
Show source-provided references
1. 10.1126/science.aav641610.1126/science.aav6416 ↗
2. 10.1016/j.cell.2019.11.00410.1016/j.cell.2019.11.004 ↗
3. 10.1126/sciadv.abe321610.1126/sciadv.abe3216 ↗
4. 10.1038/nature1235410.1038/nature12354 ↗
5. 10.1016/j.cell.2019.04.00710.1016/j.cell.2019.04.007 ↗
6. 10.1016/j.bpj.2020.05.01910.1016/j.bpj.2020.05.019 ↗
7. 10.7554/eLife.2569010.7554/eLife.25690 ↗
8. 10.1186/2192-2853-3-110.1186/2192-2853-3-1 ↗
9. 10.1038/nmeth.248810.1038/nmeth.2488 ↗
10. 10.3390/s1607112210.3390/s16071122 ↗
11. 10.1038/s41377-019-0191-510.1038/s41377-019-0191-5 ↗
12. 10.1038/ncomms702110.1038/ncomms7021 ↗
13. 10.1109/TED.2015.246468210.1109/TED.2015.2464682 ↗
14. 10.1364/OE.26.00228010.1364/OE.26.002280 ↗
15. 10.1038/srep3734910.1038/srep37349 ↗
16. 10.1002/jsid.66110.1002/jsid.661 ↗
17. 10.3389/fncel.2019.0003910.3389/fncel.2019.00039 ↗
18. 10.1038/nmeth.169410.1038/nmeth.1694 ↗
19. S.Shimada Y.Otake S.Yoshida S.Endo R.Nakamura H.Tsugawa T.Ogita T.Ogasahara K.Yokochi Y.Inoue K.Takabayashi H.Maeda K.Yamamoto M.Ono S.Matsumoto H.Hiyama T.Wakano 2021 IEEE International Electron Devices Meeting (IEDM)2021 https://doi.org/10.1109/iedm19574.2021.972063910.1109/IEDM19574.2021.9720639 ↗
20. K.Ito Y.Otake Y.Kitano A.Matsumoto J.Yamamoto T.Ogasahara H.Hiyama R.Naito K.Takeuchi T.Tada K.Takabayashi H.Nakayama K.Tatani T.Hirano T.Wakano 2020IEEE International Electron Devices Meeting (IEDM)2020 https://doi.org/10.1109/iedm13553.2020.937194410.1109/IEDM13553.2020.9371944 ↗
21. 10.1101/2021.10.13.46373010.1101/2021.10.13.463730 ↗
22. 10.1101/2021.10.21.46534510.1101/2021.10.21.465345 ↗
23. Y.Zhang J.Shannonhouse R.Gomez H.Son H.Ishida S.Evans M.Chavarha D.Shi G.Zhang M. Z.Lin Y. S.Kim ASAP4.4‐Kv2021 https://doi.org/10.1101/2021.05.21.44520210.1101/2021.05.21.445202 ↗
24. Pastoll H. · JoVE · 2012 · 61
25. 10.1109/TED.2015.245829510.1109/TED.2015.2458295 ↗
26. 10.1162/neco.2007.19.6.150310.1162/neco.2007.19.6.1503 ↗
27. Bates D. · arXiv Prepr., arXiv1406.5823 · 2014