Source abstract
Abstract
Abstract Anderson localization, the unusual phenomenon discovered in a disordered medium, describes the phase transition from the extended to localized state. Owing to the interference in multiple elastic scattering, this concept is firstly demonstrated in an electron system, then to photon and matter waves. However, Anderson localization has not been observed for polaritonic waves with its unique features of strong field confinement and tunability. Here, Anderson localization of plasmon polaritons is experimentally reported in a flat graphene sheet simultaneously with homogenous charge carrier and random tensile‐strain distributions. By selectively choosing different disordered levels, the transition from quasi‐expansion to weak localization, and finally Anderson localization are observed. Relying on the infrared nanoimaging technique, the spatial dependence of the localization is further studied, and finally the transition window from weak to Anderson localization of graphene plasmon polaritons is identified with the aid of the scaling theory. The experimental approach paves a new way to study Anderson localization in other polaritonic systems such as phonon, exciton, magnon polaritons, etc.
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Research context
OpenAlex topics: Plasmonic and Surface Plasmon Research · Gold and Silver Nanoparticles Synthesis and Applications · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physics Chinese Academy of Sciences 100190 Beijing China
School of Physical Sciences University of Chinese Academy of Sciences 100049 Beijing China
DTU Fotonik Department of Photonics Engineering and Center for Nanostructured Graphene Technical University of Denmark DK2800 Kgs. Lyngby Denmark
Beijing National Laboratory for Condensed Matter Physics 100190 Beijing China
Songshan Lake Materials Laboratory Dongguan 523808 Guangdong China
Funding
National Natural Science Foundation of China · Chinese Academy of Sciences · Danmarks Grundforskningsfond
References (36)
Show source-provided references
35. Ioffe A. · Prog. Semicond. · 1960 · 4 · 237