Wafer‐Scale Growth and Transfer of High‐Quality MoS₂ Array by Interface Design for High‐Stability Flexible Photosensitive Device

Abstract Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new‐generation flexible (opto‐)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation‐transfer of high‐uniform and quality‐enhanced MoS₂ via the precursor pre‐annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2‐inch MoS₂ array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS₂ quality but also decreases interfacial adhesion for easy separation‐transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W⁻¹, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation‐transfer strategy lightens their significance for advances in curved and wearable (opto‐)electronic applications.