VO_x‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter

Abstract Vanadium oxide (VO_x) based memristor is a promising candidate for next‐generation non‐volatile memory and radio‐frequency (RF) switches due to its compatibility with wafer‐level integration and high‐frequency operation. This work demonstrates high‐performance VO_x memristor with gold and silver electrodes, achieving a higher cutoff frequency compared to previously reported VO_x devices. The devices exhibit long retention, high endurance (≈10³ cycles), and nanosecond switching speeds, enabling the fabrication of RF switches with a cutoff frequency of ≈4.5 THz, low insertion loss (< 0.46 dB), and high isolation (>20 dB) from 0.1 to 20 GHz with stable operation extended to frequency up to 67 GHz. Leveraging these switches, a reconfigurable X‐band bandpass filter whose is realized center frequency is tuned from 8.2 GHz in the OFF state to 7.6 GHz in the ON state, achieving a tunable range of ≈600 MHz. This demonstration paves the way for compact and versatile RF front‐ends with improved frequency agility in advanced communication systems.