journal article·2025-08Open access

Instant Writing of Conductive Interface on MOF Single Crystal by Ultrafast Laser

Dongsheng Huang, Shuailong Guo, Peng Chen, Yanan Liu, Zhenhua Wang, Ye Ding, Hao Li, Huijun Wu, Zhiyuan Ma, Haoqing Jiang, Lijun Yang, Hongxing Xu

Advanced Science· Volume 12· Issue 30

Abstract

Abstract Single crystals with excellent properties have been widely used in electronics industries due to their homogeneous and consistent structures. Metal‐organic frameworks (MOFs), as a class of crystalline materials that can be synthetically tuned for functionality, are expected to be a favorable candidate for novel electronic devices. However, there is still a lack of methods to efficiently fabricate conductive patterns at the single‐crystal scale. Here, laser instant writing of in situ continuous conductive interface on MOF single crystals is reported, enabling the patterning and continuous fabrication of conductive interface at the single‐crystal scale. Carbon‐wrapped Cu nanoparticles (Cu@C NPs) conductive interface is instantly written using a 1030 nm picosecond ultrafast laser on large HKUST‐1 single crystals. It is found that different thermal accumulations can affect the conductivity of Cu@C and transformation of matter phase from Cu NPs to Cu 2 O on single crystals is observed as the ablation of carbonaceous materials. As a validation, single‐crystal sensor with interdigitated electrodes (IDEs) constructed by laser interface technique shows a wide response range of 5%–90% RH and a fast response time of 2 s toward humidity sensing. This method sheds new light on the construction of functional interface on single MOF crystal, providing a novel strategy for MOF‐based electronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Machine Learning in Materials Science · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zhenzhou Research Institute Harbin Institute of Technology Zhengzhou 450000 China

Institute of Laser Manufacturing Henan Academy of Sciences Zhengzhou 450000 China

School of Mechatronics Engineering Harbin Institute of Technology Harbin 150001 China

School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China

Funding

China Postdoctoral Science Foundation · National Natural Science Foundation of China

References (48)

Show source-provided references
1. 10.1007/s40820-024-01373-w10.1007/s40820-024-01373-w ↗
2. 10.1039/C7CS00162B10.1039/C7CS00162B ↗
3. 10.1021/ja512552g10.1021/ja512552g ↗
4. 10.1021/acs.nanolett.9b0532110.1021/acs.nanolett.9b05321 ↗
5. 10.1002/smll.20220051410.1002/smll.202200514 ↗
6. 10.1002/anie.20200429310.1002/anie.202004293 ↗
7. 10.1002/adfm.20220406510.1002/adfm.202204065 ↗
8. 10.1002/adfm.20200905710.1002/adfm.202009057 ↗
9. 10.1038/s41563-020-00912-110.1038/s41563-020-00912-1 ↗
10. 10.1039/C9CC09144K10.1039/C9CC09144K ↗
11. 10.1002/adfm.20240608810.1002/adfm.202406088 ↗
12. 10.1002/adma.20221147810.1002/adma.202211478 ↗
13. 10.1021/jacs.9b0035510.1021/jacs.9b00355 ↗
14. 10.1002/adma.20110006310.1002/adma.201100063 ↗
15. 10.1002/adfm.20231123510.1002/adfm.202311235 ↗
16. 10.1002/anie.20170674510.1002/anie.201706745 ↗
17. 10.1016/j.chempr.2019.04.01310.1016/j.chempr.2019.04.013 ↗
18. 10.1038/s41467-023-38918-310.1038/s41467-023-38918-3 ↗
19. 10.1016/j.matt.2020.03.00310.1016/j.matt.2020.03.003 ↗
20. 10.1002/smtd.20210075810.1002/smtd.202100758 ↗
21. 10.1021/acsami.9b1386410.1021/acsami.9b13864 ↗
22. 10.1039/C9CC05990C10.1039/C9CC05990C ↗
23. 10.1038/s41467-024-47293-610.1038/s41467-024-47293-6 ↗
24. 10.1038/s41563-020-00827-x10.1038/s41563-020-00827-x ↗
25. Zhu Z. · ACS Nano. · 2024 · 18
26. 10.1016/j.xcrp.2023.10167910.1016/j.xcrp.2023.101679 ↗
27. 10.1002/adma.20120048510.1002/adma.201200485 ↗
28. 10.1016/j.xcrp.2023.10165610.1016/j.xcrp.2023.101656 ↗
29. 10.1016/j.photonics.2023.10114510.1016/j.photonics.2023.101145 ↗
30. 10.1016/j.xcrp.2022.10100410.1016/j.xcrp.2022.101004 ↗
31. 10.1039/C9CE00440H10.1039/C9CE00440H ↗
32. 10.1126/sciadv.aaw451510.1126/sciadv.aaw4515 ↗
33. 10.1002/anie.20130964210.1002/anie.201309642 ↗
34. 10.1038/s41563-018-0098-110.1038/s41563-018-0098-1 ↗
35. 10.1038/s41467-020-19220-y10.1038/s41467-020-19220-y ↗
36. 10.1021/acscentsci.9b0100610.1021/acscentsci.9b01006 ↗
37. 10.1038/s41563-020-00847-710.1038/s41563-020-00847-7 ↗
38. 10.1021/acscentsci.0c0148810.1021/acscentsci.0c01488 ↗
39. 10.1021/acsaem.3c0245610.1021/acsaem.3c02456 ↗
40. 10.1038/natrevmats.2017.7510.1038/natrevmats.2017.75 ↗
41. 10.1002/adma.20230306510.1002/adma.202303065 ↗
42. 10.1021/jacs.6b0593010.1021/jacs.6b05930 ↗
43. 10.1103/PhysRevLett.83.33610.1103/PhysRevLett.83.336 ↗
44. 10.1021/acsnano.1c0184310.1021/acsnano.1c01843 ↗
45. 10.1038/s41586-022-05617-w10.1038/s41586-022-05617-w ↗
46. 10.1021/cm503818310.1021/cm5038183 ↗
47. 10.1016/j.snb.2022.13244110.1016/j.snb.2022.132441 ↗
48. 10.1016/j.inoche.2018.09.01410.1016/j.inoche.2018.09.014 ↗