journal article·2025-02Open access

Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure

Takamasa Usami, Yuya Sanada, Shumpei Fujii, Shinya Yamada, Yu Shiratsuchi, Ryoichi Nakatani, Kohei Hamaya

Advanced Science· Volume 12· Issue 7

Abstract

Abstract To develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.
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Research context

OpenAlex topics: Multiferroics and related materials · Magnetic properties of thin films · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Spintronics Research Network Graduate School of Engineering Science Osaka University 1‐3 Machikaneyama Toyonaka Osaka 560‐8531 Japan

Department of Systems Innovation Graduate School of Engineering Science Osaka University 1‐3 Machikaneyama Toyonaka Osaka 560‐8531 Japan

Spintronics Research Network Division Institute for Open and Transdisciplinary Research Initiatives Osaka University 2‐1 Yamadaoka Suita Osaka 565‐0871 Japan

Department of Materials Science and Engineering Graduate School of Engineering Osaka University 2‐1 Yamadaoka Suita Osaka 565‐0871 Japan

Funding

Japan Science and Technology Agency · Japan Society for the Promotion of Science · Toyota Physical and Chemical Research Institute

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