journal article·2024-09Open access

In‐Plane Overdamping and Out‐Plane Localized Vibration Contribute to Ultralow Lattice Thermal Conductivity of Zintl Phase KCdSb

Kai Guo, Juan Zhang, Xiaotong Yu, Yuanxin Jiang, Yang Li, Yuqi Zeng, Ruixiao Lian, Xinxin Yang, Shuankui Li, Jun Luo, Wen Li, Hao Zhang

Advanced Science· Volume 11· Issue 33

Abstract

Abstract Zintl phases typically exhibit low lattice thermal conductivity, which are extensively investigated as promising thermoelectric candidates. While the significance of Zintl anionic frameworks in electronic transport properties is widely recognized, their roles in thermal transport properties have often been overlooked. This study delves into KCdSb as a representative case, where the [CdSb4/4]− tetrahedrons not only impact charge transfer but also phonon transport. The phonon velocity and mean free path, are heavily influenced by the bonding distance and strength of the Zintl anions Cd and Sb, considering the three acoustic branches arising from their vibrations. Furthermore, the weakly bound Zintl cation K exhibits localized vibration behaviors, resulting in strong coupling between the high‐lying acoustic branch and the low‐lying optical branch, further impeding phonon diffusion. The calculations reveal that grain boundaries also contribute to the low lattice thermal conductivity of KCdSb through medium‐frequency phonon scattering. These combined factors create a glass‐like thermal transport behavior, which is advantageous for improving the thermoelectric merit of zT. Notably, a maximum zT of 0.6 is achieved for K0.84Na0.16CdSb at 712 K. The study offers both intrinsic and extrinsic strategies for developing high‐efficiency thermoelectric Zintl materials with extremely low lattice thermal conductivity.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Materials Science Guangzhou University Guangzhou 510006 China

Key Lab of Si‐based Information Materials & Devices, Integrated Circuits Design Department of Education of Guangdong Province Guangzhou 510006 China

School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE) Fudan University Shanghai 200433 China

School of Materials Science and Engineering Shanghai University Shanghai 200444 China

Interdisciplinary Materials Research Center School of Materials Science and Engineering Tongji University Shanghai 201804 China

State Key Laboratory of Photovoltaic Science and Technology Fudan University Shanghai 200433 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

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