DataVXAdvanced SciencePaper
journal article·2022-09Open access

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie

Advanced Science· Volume 9· Issue 25
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Source abstract

Abstract

Abstract Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low‐power operation. Here, it demonstrates that the power consumption can be reduced to ≈53.7 fJ in a cell with ≈3 nm‐wide graphene nanoribbon (GNR) as edge‐contact, whose cross‐sectional area is only ≈1 nm2. It is found that the polarity of the bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias is applied to the graphene electrode, the endurance can be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of the hexagonal boron nitride (h‐BN) multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low‐power PCRAM and can benefit in‐memory computing in the future.
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Research context

Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 P. R. China

School of Physical Science and Technology ShanghaiTech University Shanghai 201210 P. R. China

Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality · China Postdoctoral Science Foundation

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