journal article·2026-01

In Situ Evaporated Phosphine Oxide Bifunctional Additive for Efficient Vacuum‐Deposited Near‐Infrared Perovskite Light‐Emitting Diodes

Lanxin Qin, Xiang Zhang, Weiyang Zhou, Jae‐Wook Kang, Siwei He, Jiajun Luo

Advanced Optical Materials· Volume 14· Issue 2
Publisher page

Abstract

Abstract Vacuum‐deposited perovskite light‐emitting diodes (PeLEDs) have demonstrated great potential for next‐generation light sources. However, vacuum‐deposited perovskites suffer from high defect densities due to the lack of sufficient passivation strategies. Herein, an effective in situ passivation strategy for vacuum‐deposited PeLEDs using bifunctional tris(4‐fluorophenyl)phosphine oxide (TFPPO) additive is introduced. The P═O moieties of TFPPO with lone pair electrons bond with the undercoordinated Pb 2+ sites, suppressing the defect formation. Besides, the fluorine functional groups of TFPPO that form hydrogen bonds with the formamidinium cations control their diffusion during the vacuum deposition, thus reducing the crystal grain size. As a result, the uniform and compact TFPPO‐incorporated FACsPbI 3 thin film enables near‐infrared PeLED with a record external quantum efficiency of 14.33%. This work presents a process‐compatible defect passivation strategy to advance vacuum‐deposited perovskite optoelectronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Optical properties and cooling technologies in crystalline materials · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information Huazhong University of Science and Technology (HUST) 1037 Luoyu Road Wuhan Hubei 430074 China

Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea

School of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Hubei Province · National Key Research and Development Program of China

References (36)

Show source-provided references
1. 10.1021/nl504877910.1021/nl5048779 ↗
2. 10.1038/s41565-022-01113-410.1038/s41565-022-01113-4 ↗
3. 10.1002/adma.20150256710.1002/adma.201502567 ↗
4. 10.1038/s41586-018-0576-210.1038/s41586-018-0576-2 ↗
5. 10.1016/j.joule.2020.04.00710.1016/j.joule.2020.04.007 ↗
6. 10.1002/anie.20241068910.1002/anie.202410689 ↗
7. 10.1002/adma.20230228310.1002/adma.202302283 ↗
8. 10.1038/s41586-023-05792-410.1038/s41586-023-05792-4 ↗
9. 10.1038/s41566-022-01046-310.1038/s41566-022-01046-3 ↗
10. 10.1038/s41586-018-0575-310.1038/s41586-018-0575-3 ↗
11. 10.1002/adma.20210978510.1002/adma.202109785 ↗
12. 10.1002/adma.20180610510.1002/adma.201806105 ↗
13. 10.1002/adfm.20230768210.1002/adfm.202307682 ↗
14. 10.1038/s41586-021-03997-z10.1038/s41586-021-03997-z ↗
15. 10.1038/s41586-022-05304-w10.1038/s41586-022-05304-w ↗
16. 10.1038/s41377-022-00761-410.1038/s41377-022-00761-4 ↗
17. 10.1038/s41578-024-00651-810.1038/s41578-024-00651-8 ↗
18. 10.1016/j.device.2024.10054910.1016/j.device.2024.100549 ↗
19. 10.1002/adfm.20190360710.1002/adfm.201903607 ↗
20. 10.1016/j.cej.2024.15595510.1016/j.cej.2024.155955 ↗
21. 10.1038/s41566-023-01177-110.1038/s41566-023-01177-1 ↗
22. 10.1038/s41377-025-01740-110.1038/s41377-025-01740-1 ↗
23. 10.1021/acsenergylett.7b0096710.1021/acsenergylett.7b00967 ↗
24. 10.1007/s40820-025-01776-310.1007/s40820-025-01776-3 ↗
25. 10.1016/j.joule.2022.11.00410.1016/j.joule.2022.11.004 ↗
26. 10.1002/adfm.20190975410.1002/adfm.201909754 ↗
27. 10.1016/j.joule.2020.07.00210.1016/j.joule.2020.07.002 ↗
28. 10.1038/s41467-022-35218-010.1038/s41467-022-35218-0 ↗
29. 10.1002/ange.20240783310.1002/ange.202407833 ↗
30. 10.1002/aenm.20150131010.1002/aenm.201501310 ↗
31. 10.1038/s41566-020-00732-410.1038/s41566-020-00732-4 ↗
32. 10.1002/adom.20190139010.1002/adom.201901390 ↗
33. 10.1038/s41467-019-08425-510.1038/s41467-019-08425-5 ↗
34. 10.1038/s41467-021-25093-610.1038/s41467-021-25093-6 ↗
35. 10.1002/adfm.20200155910.1002/adfm.202001559 ↗
36. 10.1002/aenm.20190148910.1002/aenm.201901489 ↗