journal article·2019-12Open access

TMD‐Based Phototransistors: Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor (Advanced Optical Materials 23/2019)

Du Xiang, Tao Liu, Junyong Wang, Peng Wang, Lin Wang, Yue Zheng, Yanan Wang, Jing Gao, Kah‐Wee Ang, Goki Eda, Weida Hu, Lei Liu, Wei Chen

Advanced Optical Materials· Volume 7· Issue 23

Abstract

In article number 1901115, Du Xiang and co-workers report the photodetection in 2D multilayer ReS2 transistor via bolometric mode, which relies on light heating induced conductance change, making it feasible for sub-bandgap photon detection. The findings would extend the response spectrum of large-bandgap transition metal dichalcogenides for broadband photodetectors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Gas Sensing Nanomaterials and Sensors

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Affiliations

Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117543 Singapore

Centre for Advanced 2D Materials and Graphene Research Centre National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore

Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117542 Singapore

State Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore 117583 Singapore

State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Chinese Academy of Sciences No. 3888 Dongnanhu Road Changchun 130033 P. R. China

National University of Singapore (Suzhou) Research Institute 377 Lin Quan Street, Suzhou Industrial Park Suzhou Jiangsu 215123 China

Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Binhai New City Fuzhou 350207 China

References

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