Light and Force Multifunctional Detector Based on the Interfacial Polarization of the ITO/MAPbBr₃ Schottky Junction

Abstract The MAPbBr₃ halide perovskite with a cubic paraelectric phase exhibits excellent semiconductor properties. Here, an interfacial polarization (P_in) at the ITO/MAPbBr₃ Schottky junction can largely enhance photovoltaic current and be applied in the light and force multifunctional detector. An external force can alter the P_in and increase the photocurrent of the ITO/MAPbBr₃/spiro‐OMeTAD/ITO detector, and a 1 N force increases the short‐circuit photocurrent by 120%. Furthermore, the ITO/MAPbBr₃/ITO structure with one ITO surface in light and another ITO surface in dark exhibits an equivalent piezoelectric coefficient (d₃₃) of up to 83 pC N⁻¹ since the P_in and the corresponding photovoltaic current dynamically change with periodic external force. The light and force multifunctional detectors will promote the development and blend of optoelectronic devices and MEMS.