Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor
Source abstract
Abstract
Abstract Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.
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Research context
OpenAlex topics: Plasmonic and Surface Plasmon Research · Gold and Silver Nanoparticles Synthesis and Applications · Thermal Radiation and Cooling Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Astronomy The University of Nottingham Nottingham NG7 2RD UK
IES l'institut d'électronique Univ. Montpellier and CNRS UMR 5214 F‐34000 Montpellier France
Dipartimento di Fisica Sapienza Università di Roma Piazzale A. Moro 2 00185 Roma Italy
Physics Department Lancaster University Lancaster LA1 4YB UK
Funding
Engineering and Physical Sciences Research Council · H2020 European Research Council · Agence Nationale de la Recherche
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