Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p+‐GaN Heterojunction (Advanced Optical Materials 2/2022)
Source abstract
Abstract
The influence of the pyro-phototronic effect on a self-powered photodetector, composed of Ga-incorporated ZnO microwire (ZnO:Ga MW) and p+-GaN layer, was studied systematically by Mingming Jiang, Xiaosheng Fang, Caixia Kan, and co-workers (see article number 2101851). Varying the Ga-doping concentration in ZnO:Ga MWs, the pyroelectric current and photovoltaic current of photodetectors can be tuned, and the variation is attributed to the increased rate of photogenerated temperature and narrowed depletion layer.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials
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Affiliations
College of Science MIIT Key Laboratory of Aerospace Information Materials and Physics Key Laboratory for Intelligent Nano Materials and Devices Nanjing University of Aeronautics and Astronautics Nanjing 211106 P. R. China
Department of Materials Science Fudan University Shanghai 200433 P. R. China
References
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