Vacuum Ultraviolet (120–200 nm) Avalanche Photodetectors
Source abstract
Abstract
Adv. Opt. Mater. 2022, 10, 2102424 DOI: 10.1002/adom.202102424 Published: 24 February 2022 L. Jia, F. Huang, W. Zheng State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China E-mail: zhengw37@mail.sysu.edu.cn The authors wish to correct errors related to Figure 1d of the manuscript, which will mislead the reader. Due to the authors’ carelessness, the experimental data were numbered incorrectly, which led to misuse of photoluminescence (PL) data for AlN film on transparent semi-insulating SiC substrate. Here, we provide the accurate testing information, i.e., the PL data of AlN film on green n-type SiC substrate. The following correction should be applied to the published paper: Figure 1 needs to be replaced by the image below, which contains the updated part (d). Figure 1
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Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · ZnO doping and properties
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References
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