journal article·2025-11

Synergistic Effect of Compositional Engineering and Graded Heterojunction Formation in Tin‐Halide Perovskites for Near‐Infrared Photodetectors

Jongmin Lee, Hansol Park, Seung Yoon Shin, Seon‐Jeong Lim, Hyeong Ju Eun, Bum Ho Jeong, Sanghyuk Park, Jongchul Lim, Jong H. Kim, Kyu‐Tae Lee, Hui Joon Park

Advanced Optical Materials· Volume 13· Issue 32
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Abstract

Abstract Tin (Sn)‐halide perovskites present significant potential as lead‐free alternatives for various optoelectronic applications. However, their performance is often hindered by oxidation and high defect densities. In this study, these challenges are addressed by combining compositional engineering with a C 60 ‐based graded heterojunction (GHJ) strategy. The incorporation of methylammonium chloride (MACl) into formamidinium tin iodide (FASnI 3 ) induces lattice contraction, enhances crystallinity, and reduces trap densities in ≈200 nm‐thick films, as confirmed by X‐ray diffraction (XRD), photoluminescence (PL), time‐resolved PL, and X‐ray photoelectron spectroscopy (XPS). Additionally, the introduction of C 60 as a passivation layer further improves film quality, reflected in increased built‐in potential and reduced trap density. As a result, the optimized lead‐free perovskite photodetectors exhibit superior near‐infrared performance, achieving an external quantum efficiency of 63.4% and a specific detectivity of 1.38 × 10 11 Jones at 810 nm, alongside reduced noise levels and faster response times. These findings highlight the efficacy of integrating compositional engineering and GHJ formation to develop stable, high‐performance Sn‐halide perovskite devices for advanced near‐infrared photodetection applications.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Organic and Nano Engineering Hanyang University Seoul 04763 Republic of Korea

Human‐Tech Convergence Program Hanyang University Seoul 04763 Republic of Korea

Samsung Advanced Institute of Technology Samsung Electronics Suwon 16678 Republic of Korea

Department of Molecular Science and Technology Ajou University Suwon 16499 Republic of Korea

Department of Chemistry Kongju National University Kongju 32588 Republic of Korea

Graduate School of Energy Science and Technology Chungnam National University Daejeon 34134 Republic of Korea

Department of Physics Inha University Incheon 22212 Republic of Korea

Department of Semiconductor Engineering Hanyang University Seoul 04763 Republic of Korea

Funding

National Research Foundation of Korea

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