Enhanced Visible‐NIR Dual‐Band Performance of GaAs Nanowire Photodetectors Through Phase Manipulation (Advanced Optical Materials 19/2025)
Source abstract
Abstract
Dual-Band Photodetectors In article 2500289, Jilong Tang, Qun Hao, Zhipeng Wei, and co-workers study high-quality GaAs nanowires with reduced defect density by using Ga droplet wetting for phase manipulation. This method significantly improves their optoelectronic performance in the visible and near-infrared regions.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advanced Semiconductor Detectors and Materials
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Affiliations
State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 P. R. China
Semiconductor Laser and Application Laboratory Zhongshan Institute of Changchun University of Science and Technology Zhongshan 528437 P. R. China
References
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