journal article·2024-11Open access

Chemical Vapor Deposited Thin Palladium Sulfide Crystals for Highly Photoresponsive Photodetector

Shaolong Jiang, Erding Zhao, Xi Zhang, Jin Yang, Qian Liu, Jiageng Liu, Yu‐Fei Lang, Qishuo Yang, Bojian Zhou, Yu‐Qing Zhao, Yilin Sun, Fuhai Su, Fuchen Hou, Guang Yang

Advanced Optical Materials· Volume 12· Issue 33

Abstract

Abstract Nonlayered palladium sulfide (PdS) is of interest due to its rich physical properties and promising applications in optoelectronic devices. However, the growth of thin nonlayered PdS remains challenging because of its intrinsic 3D lattice structure. Here, the first demonstration of the direct synthesis of thin rectangular PdS ribbons/flakes on SiO2/Si substrates by a facile chemical vapor deposition (CVD) approach is presented. The atomic structure and high crystalline quality of CVD‐derived PdS crystals are shown by scanning transmission electron microscopy. The nonlinear saturable absorption and absorption enhancement are revealed by using ultrafast optical pump‐probe spectroscopy, and the photocarrier dynamics present the hot phonon bottleneck and Auger recombination effects. Additionally, the Raman vibration modes display the polarization‐dependent properties verified by angle‐resolved polarized Raman spectroscopy. Importantly, the photodetector based on PdS ribbon demonstrates a decent photoresponsivity of ≈7.7 × 103 A W−1. These results provide an effective way to form thin nonlayered PdS with potential applications in the field of photodetection.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China

Quantum Science Center of Guangdong‐Hong Kong‐Macao Greater Bay Area (Guangdong) Shenzhen 518045 China

Department of Physics Southern University of Science and Technology Shenzhen 518055 China

Frontiers Science Center for Flexible Electronics (FSCFE) Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME) Northwestern Polytechnical University Xi'an 710072 China

Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen 518055 China

College of Metallurgy and Energy North China University of Science and Technology Tangshan 063210 China

Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 China

School of Physics and Electronics Science Hunan University of Science and Technology Xiangtan 411201 China

School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China

Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China

Funding

National Natural Science Foundation of China

References (47)

Show source-provided references
1. 10.1002/adma.20150427410.1002/adma.201504274 ↗
2. 10.1002/adma.20160296910.1002/adma.201602969 ↗
3. 10.1021/acsami.1c1182410.1021/acsami.1c11824 ↗
4. 10.1002/adfm.20210294310.1002/adfm.202102943 ↗
5. 10.1002/adfm.20200677410.1002/adfm.202006774 ↗
6. 10.1038/s44160-022-00149-710.1038/s44160-022-00149-7 ↗
7. 10.1016/j.scib.2024.07.02510.1016/j.scib.2024.07.025 ↗
8. 10.1002/smll.20220691510.1002/smll.202206915 ↗
9. 10.1002/adma.20190623810.1002/adma.201906238 ↗
10. 10.1002/adma.20200560710.1002/adma.202005607 ↗
11. 10.1002/adma.20210720610.1002/adma.202107206 ↗
12. 10.1016/j.tsf.2006.12.07910.1016/j.tsf.2006.12.079 ↗
13. 10.1088/1361-648X/aab57010.1088/1361-648X/aab570 ↗
14. 10.1039/C8RA01613E10.1039/C8RA01613E ↗
15. 10.1038/ncomms956910.1038/ncomms9569 ↗
16. 10.1002/adma.20170501510.1002/adma.201705015 ↗
17. 10.1038/nnano.2017.4310.1038/nnano.2017.43 ↗
18. 10.1038/s41586-018-0008-310.1038/s41586-018-0008-3 ↗
19. 10.1038/s41467-018-03388-510.1038/s41467-018-03388-5 ↗
20. 10.1002/smll.20190278910.1002/smll.201902789 ↗
21. 10.1002/adma.20190090110.1002/adma.201900901 ↗
22. 10.1021/acs.nanolett.1c0440310.1021/acs.nanolett.1c04403 ↗
23. 10.1002/adma.20220946510.1002/adma.202209465 ↗
24. 10.1002/adma.20220789510.1002/adma.202207895 ↗
25. 10.1002/adma.20230411810.1002/adma.202304118 ↗
26. 10.1007/s12274-020-2673-410.1007/s12274-020-2673-4 ↗
27. 10.1007/s12274-022-4168-y10.1007/s12274-022-4168-y ↗
28. 10.1103/PhysRevB.39.118010.1103/PhysRevB.39.1180 ↗
29. 10.1103/PhysRevB.54.1448710.1103/PhysRevB.54.14487 ↗
30. 10.1038/nnano.2011.24310.1038/nnano.2011.243 ↗
31. 10.1039/C5CS00106D10.1039/C5CS00106D ↗
32. 10.1063/5.015552810.1063/5.0155528 ↗
33. 10.1021/nl060199z10.1021/nl060199z ↗
34. 10.1016/j.jallcom.2019.05.28010.1016/j.jallcom.2019.05.280 ↗
35. 10.1021/acsnano.7b0486010.1021/acsnano.7b04860 ↗
36. 10.1039/C4CS00282B10.1039/C4CS00282B ↗
37. 10.1021/nn503893j10.1021/nn503893j ↗
38. 10.1021/acs.jpcc.6b1205910.1021/acs.jpcc.6b12059 ↗
39. 10.1002/adma.20140089510.1002/adma.201400895 ↗
40. 10.1039/C5NR02292D10.1039/C5NR02292D ↗
41. 10.1002/adma.20180116410.1002/adma.201801164 ↗
42. 10.1007/s12274-017-1796-810.1007/s12274-017-1796-8 ↗
43. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
44. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
45. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
46. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
47. 10.1063/1.220459710.1063/1.2204597 ↗