journal article·2023-09Open access

Exciton Linewidth and Exciton‐Phonon Coupling in 2H and 3R Bilayer WS2 Studied by Magnetic Circular Dichroism Spectrum

Nai Jiang, Jia Shi, Heng Wu, Dong Zhang, Hui Zhu, Xinfeng Liu, Ping‐Heng Tan, Kai Chang, Houzhi Zheng, Chao Shen

Advanced Optical Materials· Volume 11· Issue 18

Abstract

Abstract Layered transition metal dichalcogenides (TMDs) are a promising platform for new photonic and optoelectronic devices. Exciton‐phonon interaction is critical in determining their characteristics such as the exciton coherence lifetime and linewidth. However, the exciton linewidth obtained by conventional reflection spectrum is greatly affected by the background signals, and the research into exciton‐phonon coupling difference induced by stacking‐order in multi‐layer structures is still lacking. In this work, the temperature‐dependent exciton linewidths of CVD‐grown large‐area monolayer, 2H and 3R‐stacking bilayer WS2 based on a self‐designed reflective magnetic circular dichroism (MCD) spectrum are systematically investigated. It is found that 2H‐bilayer WS2 exhibits significantly larger exciton linewidth compared with monolayer and 3R bilayer, which can be attributed to the appearance of new phonon‐assisted relaxation channels caused by interlayer coupling. Meanwhile, 3R bilayer with a redshifted exciton peak has a narrower linewidth than 2H phase because the interlayer hopping is suppressed, resulting in the absence of interlayer scattering channel. These results provide intuitive evidence for the exciton linewidth‐broadening and exciton‐phonon coupling in different stacked layers and open up new vistas for the development of TMD‐based narrow‐linewidth nano‐sensors devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Plasmonic and Surface Plasmon Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Institute of Information Photonics Technology and School of Physics and Optoelectronics Faculty of Science Beijing University of Technology Beijing 100124 China

CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China

Funding

Chinese Academy of Sciences

References (63)

Show source-provided references
1. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
2. 10.1515/nanoph-2016-016010.1515/nanoph-2016-0160 ↗
3. 10.1038/nature2060110.1038/nature20601 ↗
4. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
5. 10.1021/nl504500710.1021/nl5045007 ↗
6. 10.1103/PhysRevB.86.24120110.1103/PhysRevB.86.241201 ↗
7. 10.1016/j.ssc.2014.11.00510.1016/j.ssc.2014.11.005 ↗
8. 10.1103/PhysRevB.94.07544010.1103/PhysRevB.94.075440 ↗
9. 10.1103/PhysRevLett.113.02680310.1103/PhysRevLett.113.026803 ↗
10. 10.1103/PhysRevLett.113.07680210.1103/PhysRevLett.113.076802 ↗
11. 10.1103/PhysRevB.86.11540910.1103/PhysRevB.86.115409 ↗
12. 10.1088/2053-1583/aabc1c10.1088/2053-1583/aabc1c ↗
13. 10.1038/s41467-020-20244-710.1038/s41467-020-20244-7 ↗
14. 10.1021/acs.nanolett.8b0277410.1021/acs.nanolett.8b02774 ↗
15. 10.1039/C5NR00383K10.1039/C5NR00383K ↗
16. 10.1021/nl403270k10.1021/nl403270k ↗
17. 10.1103/PhysRevB.85.11531710.1103/PhysRevB.85.115317 ↗
18. 10.1103/PhysRevB.90.04542210.1103/PhysRevB.90.045422 ↗
19. 10.1038/ncomms1327910.1038/ncomms13279 ↗
20. 10.1038/ncomms1467010.1038/ncomms14670 ↗
21. 10.1103/PhysRevLett.115.25740310.1103/PhysRevLett.115.257403 ↗
22. Arora A. · Nanoscale · 2015 · 7
23. 10.1016/j.pquantelec.2006.12.00210.1016/j.pquantelec.2006.12.002 ↗
24. 10.1021/acsnano.5b0547410.1021/acsnano.5b05474 ↗
25. 10.1038/ncomms596610.1038/ncomms5966 ↗
26. 10.1021/nn500228r10.1021/nn500228r ↗
27. 10.1021/acs.nanolett.5b0388310.1021/acs.nanolett.5b03883 ↗
28. 10.1021/acs.nanolett.5b0501510.1021/acs.nanolett.5b05015 ↗
29. 10.1038/am.2017.22610.1038/am.2017.226 ↗
30. 10.1038/s41467-020-16023-z10.1038/s41467-020-16023-z ↗
31. 10.1021/acs.jpcc.9b0721310.1021/acs.jpcc.9b07213 ↗
32. 10.1103/PhysRevMaterials.6.07400510.1103/PhysRevMaterials.6.074005 ↗
33. 10.1088/2053-1583/aae95310.1088/2053-1583/aae953 ↗
34. 10.1002/adma.20210872110.1002/adma.202108721 ↗
35. 10.1063/1.502476610.1063/1.5024766 ↗
36. 10.1002/adma.20110479810.1002/adma.201104798 ↗
37. 10.1007/s10853-017-0936-610.1007/s10853-017-0936-6 ↗
38. 10.1088/2053-1583/ab4f1f10.1088/2053-1583/ab4f1f ↗
39. 10.1002/adma.20170148610.1002/adma.201701486 ↗
40. 10.1002/adfm.20180687410.1002/adfm.201806874 ↗
41. Du L. · Research · 2019 · 2019
42. 10.1038/lsa.2016.13110.1038/lsa.2016.131 ↗
43. 10.1021/acsnano.8b0500610.1021/acsnano.8b05006 ↗
44. Jinho Y. · Flat Chem · 2017 · 3 · 64
45. 10.1103/PhysRevB.89.07540910.1103/PhysRevB.89.075409 ↗
46. 10.1021/acsnano.5b0188410.1021/acsnano.5b01884 ↗
47. 10.1088/1361-6528/ab22e610.1088/1361-6528/ab22e6 ↗
48. 10.1039/D0NR02160A10.1039/D0NR02160A ↗
49. 10.1103/PhysRevB.106.04541110.1103/PhysRevB.106.045411 ↗
50. 10.1016/0022-3697(79)90162-810.1016/0022-3697(79)90162-8 ↗
51. 10.1103/PhysRevB.42.1121810.1103/PhysRevB.42.11218 ↗
52. 10.1063/1.12301210.1063/1.123012 ↗
53. 10.1063/1.37210410.1063/1.372104 ↗
54. 10.1103/PhysRevB.93.07541110.1103/PhysRevB.93.075411 ↗
55. 10.1088/2053-1583/aacfb710.1088/2053-1583/aacfb7 ↗
56. 10.1038/s41467-021-20895-010.1038/s41467-021-20895-0 ↗
57. 10.1103/PhysRevB.103.04542610.1103/PhysRevB.103.045426 ↗
58. 10.1103/PhysRevLett.114.13640310.1103/PhysRevLett.114.136403 ↗
59. 10.1103/PhysRevB.93.15540710.1103/PhysRevB.93.155407 ↗
60. 10.1021/acs.nanolett.8b0179310.1021/acs.nanolett.8b01793 ↗
61. 10.1039/C5NR06782K10.1039/C5NR06782K ↗
62. 10.1103/PhysRevB.98.03530210.1103/PhysRevB.98.035302 ↗
63. 10.1002/andp.20140012810.1002/andp.201400128 ↗