journal article·2021-07Open access

Light‐Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals

Nathan D. Cottam, Chengxi Zhang, Joni L. Wildman, Amalia Patanè, Lyudmila Turyanska, Oleg Makarovsky

Advanced Optical Materials· Volume 9· Issue 13

Abstract

Abstract Inorganic perovskite nanocrystals (NCs) have demonstrated a number of unique optical and electronic properties for optoelectronic applications. However, the physical properties of these nanostructures, such as the dynamics of charge carriers on different timescales and their effect on the optical recombination of carriers, are not yet fully understood. This work reports on a slow (>1 s) reversible quenching of the NC photoluminescence due to a light‐induced Stark effect involving defects on the surface of the NCs and the redistribution of photoexcited carriers onto the NC surface. This phenomenon can influence the operation of optoelectronic devices based on these NCs, including hybrid photosensors based on graphene decorated with inorganic perovskite NCs, revealing their prospects and limitations.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

Key Laboratory of Advanced Display and System Applications Shanghai University 149 Yanchang Road Shanghai 200072 China

Faculty of Engineering University of Nottingham Nottingham NG7 2RD UK

Funding

Engineering and Physical Sciences Research Council

References (40)

Show source-provided references
1. 10.1038/s41467-018-03169-010.1038/s41467-018-03169-0 ↗
2. 10.1002/adfm.20180521410.1002/adfm.201805214 ↗
3. 10.1002/adma.20170040010.1002/adma.201700400 ↗
4. 10.1021/nl504877910.1021/nl5048779 ↗
5. 10.1002/adfm.20191058210.1002/adfm.201910582 ↗
6. 10.1002/admi.20180082610.1002/admi.201800826 ↗
7. 10.1021/acsaelm.9b0066410.1021/acsaelm.9b00664 ↗
8. 10.1021/acsnano.9b0091110.1021/acsnano.9b00911 ↗
9. 10.1021/acs.jpcc.8b1235010.1021/acs.jpcc.8b12350 ↗
10. 10.1038/s41467-019-13909-510.1038/s41467-019-13909-5 ↗
11. 10.1039/C9TC03978C10.1039/C9TC03978C ↗
12. 10.1039/C9NR03707A10.1039/C9NR03707A ↗
13. 10.1021/acsnano.5b0458410.1021/acsnano.5b04584 ↗
14. 10.1039/D0NR00633E10.1039/D0NR00633E ↗
15. 10.1021/acsnano.8b0767710.1021/acsnano.8b07677 ↗
16. 10.1021/acsenergylett.7b0054710.1021/acsenergylett.7b00547 ↗
17. 10.1038/s41563-018-0018-410.1038/s41563-018-0018-4 ↗
18. 10.1021/acs.jpclett.9b0068910.1021/acs.jpclett.9b00689 ↗
19. 10.1002/adfm.20160675010.1002/adfm.201606750 ↗
20. 10.1021/acs.nanolett.6b0445310.1021/acs.nanolett.6b04453 ↗
21. 10.1038/ncomms1168310.1038/ncomms11683 ↗
22. 10.1038/s41467-017-00284-210.1038/s41467-017-00284-2 ↗
23. 10.1038/s41467-019-09047-710.1038/s41467-019-09047-7 ↗
24. 10.1002/adma.20140537210.1002/adma.201405372 ↗
25. 10.1021/acs.jpclett.7b0219310.1021/acs.jpclett.7b02193 ↗
26. 10.1364/PRJ.40187210.1364/PRJ.401872 ↗
27. 10.1002/aenm.20190365910.1002/aenm.201903659 ↗
28. 10.1016/j.jlumin.2018.02.03610.1016/j.jlumin.2018.02.036 ↗
29. 10.1021/acs.jpcc.7b0630110.1021/acs.jpcc.7b06301 ↗
30. 10.1002/adfm.20180094510.1002/adfm.201800945 ↗
31. 10.1038/s42005-021-00518-210.1038/s42005-021-00518-2 ↗
32. Graphenea Graphenea GFET‐S10 for Sensing Applications www.graphenea.com/products/gfet-s10-for-sensing-applications-10-mm-x-10-mm(accessed:2020).
33. Davies J. H. · 1998
34. 10.1103/PhysRevMaterials.2.11600310.1103/PhysRevMaterials.2.116003 ↗
35. 10.1038/nnano.2016.14010.1038/nnano.2016.140 ↗
36. 10.1021/acs.jpcc.8b0320610.1021/acs.jpcc.8b03206 ↗
37. 10.1021/acs.jpcc.7b1116810.1021/acs.jpcc.7b11168 ↗
38. 10.1021/acs.jpclett.7b0048210.1021/acs.jpclett.7b00482 ↗
39. 10.1039/C9TC06566K10.1039/C9TC06566K ↗
40. 10.1002/adfm.20191058210.1002/adfm.201910582 ↗