Photodetectors: Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel‐Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis (Advanced Optical Materials 24/2017)

Infiltration synthesis, an emerging material hybridization technique derived from atomic layer deposition, enables fully complementary metal-oxide-semiconductor-compatible synthesis of parallel-aligned ultrathin polycrystalline ZnO nanowire arrays and their integration into ultrasensitive UV detectors. The detectors presented in article number 1700807 by Chang-Yong Nam and Aaron Stein feature the lowest dark current reported for photoconductive photodetectors, a six-decade detector on-off ratio, and superlinear photoconductivity first observed in nanowires.