journal article·2021-06Open access

Origin of Intramolecular Low‐Threshold Amplified Spontaneous Emission

Qi Wei, Ruihong Duan, Qi Zhang, Linghai Xie, Ruidong Xia, Yuanping Yi, Jérémie Léonard, Stefan Haacke, Juan Cabanillas‐Gonzalez, Yan Qian, Wei Huang

Advanced Optical Materials· Volume 9· Issue 12

Abstract

Abstract Amorphous thin films from solution‐processable semiconductors are key materials for low‐cost and large area optoelectronics. Design rules toward novel amorphous compounds with outstanding light emission and light amplification properties require understanding of the intimate relation between chemical and electronic structure. Here, a series of compounds with tunable electronic transition characters of the lowest excited state, from local excited (LE), hybrid local charge‐transfer (HLCT) to charge‐transfer (CT) character is delicately designed. By deploying a combination of computational calculations and femtosecond‐transient absorption experiments, it is shown that pure LE states strongly coupled to high wavenumber vibrational modes favor to form a few dominant discrete vibrational levels and are essential for optical gain, whereas HLCT or CT states are preferably coupled to low frequency vibrational modes and form a large number of consecutive vibrational levels which lead to broad excited‐state absorption overwhelming stimulated emission. The results provide guidelines for the rational design of efficient organic laser materials.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Organic Light-Emitting Diodes Research · Luminescence and Fluorescent Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications (NUPT) 9 Wenyuan Road Nanjing 210023 China

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

College of Chemistry Institute of Green Catalysis Zhengzhou University Zhengzhou 450001 China

Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

Institut de Physique et Chimie des Matériaux de Strasbourg and Labex NIE, UMR 7504 CNRS ‐‐ Université de Strasbourg Strasbourg F‐67000 France

Madrid Institute for Advanced Studies IMDEA Nanoscience Calle Faraday 9, Cantoblanco Madrid 28049 Spain

Funding

National Natural Science Foundation of China · Priority Academic Program Development of Jiangsu Higher Education Institutions

References (37)

Show source-provided references
1. 10.1021/acs.chemrev.6b0017210.1021/acs.chemrev.6b00172 ↗
2. 10.1002/lpor.20110003410.1002/lpor.201100034 ↗
3. 10.1038/nphoton.2014.23910.1038/nphoton.2014.239 ↗
4. 10.1002/adma.20090245110.1002/adma.200902451 ↗
5. 10.1002/adma.20080243610.1002/adma.200802436 ↗
6. 10.1002/adfm.20080189710.1002/adfm.200801897 ↗
7. 10.1002/pi.317310.1002/pi.3173 ↗
8. 10.1038/s41528-019-0062-410.1038/s41528-019-0062-4 ↗
9. 10.1038/nmat216510.1038/nmat2165 ↗
10. 10.1002/adma.20080193010.1002/adma.200801930 ↗
11. 10.1002/adma.20080074810.1002/adma.200800748 ↗
12. 10.1002/adma.20100379710.1002/adma.201003797 ↗
13. 10.1002/adma.20120122910.1002/adma.201201229 ↗
14. 10.1002/adfm.20150133710.1002/adfm.201501337 ↗
15. 10.1002/adma.20130535510.1002/adma.201305355 ↗
16. 10.7567/1882-0786/ab1b9010.7567/1882-0786/ab1b90 ↗
17. 10.1038/lsa.2016.2610.1038/lsa.2016.26 ↗
18. 10.1021/nl050469y10.1021/nl050469y ↗
19. 10.1038/srep3456510.1038/srep34565 ↗
20. 10.1039/B915117F10.1039/B915117F ↗
21. 10.1039/C8TC01204K10.1039/C8TC01204K ↗
22. 10.1002/adom.20180026310.1002/adom.201800263 ↗
23. 10.1002/adom.20160100310.1002/adom.201601003 ↗
24. 10.1021/cr040084k10.1021/cr040084k ↗
25. 10.1021/cr050140x10.1021/cr050140x ↗
26. 10.1103/PhysRevLett.94.11740210.1103/PhysRevLett.94.117402 ↗
27. 10.1103/PhysRevB.76.23520310.1103/PhysRevB.76.235203 ↗
28. 10.1103/PhysRevB.70.07520210.1103/PhysRevB.70.075202 ↗
29. 10.1103/PhysRevLett.89.10740110.1103/PhysRevLett.89.107401 ↗
30. 10.1063/1.187908510.1063/1.1879085 ↗
31. 10.1002/adfm.20170582410.1002/adfm.201705824 ↗
32. 10.1016/S0009-2614(02)00349-410.1016/S0009-2614(02)00349-4 ↗
33. 10.1039/C8NR01064A10.1039/C8NR01064A ↗
34. 10.1002/adma.20110201510.1002/adma.201102015 ↗
35. 10.1103/PhysRevB.63.16521310.1103/PhysRevB.63.165213 ↗
36. 10.1002/adfm.20150337110.1002/adfm.201503371 ↗
37. 10.1021/acs.jpclett.5b0161310.1021/acs.jpclett.5b01613 ↗