Investigation on Charge Carrier Recombination of Hybrid Organic–Inorganic Perovskites Doped with Aggregation‐Induced Emission Luminogen under High Photon Flux Excitation

Abstract A typical aggregation‐induced emission luminogen (AIE‐gen) is introduced into perovskite CH₃NH₃PbI₃ and the material and photophysical properties of hybrid films are investigated with absorption, X‐ray diffraction, and steady‐state photoluminescence (PL) characterization. When excited by a high photon flux (4.08 × 10²² cm⁻² s⁻¹) laser beam (3.82 eV) at room temperature, the CH₃NH₃PbI₃ polycrystalline thin films exhibit dual emission locating at 1.64 eV (P₁) and 1.59 eV (P₂). The two PL peaks are attributed to free carrier (FC) recombination and exciton recombination, respectively. Additionally, an introduction of AIE‐gen changes the peak value ratio of P₁:P₂, indicating the radiative recombination ratio of FCs versus excitons in perovskite films can be tuned with this method. Since recombination of FCs and excitons plays a key role in photovoltaic and luminescent devices, this finding helps to clarify the recombination behavior of photogenerated carriers in perovskites and promote their further applications in photoelectric devices.