Photovoltaic‐Ferroelectric Materials for the Realization of All‐Optical Devices
Source abstract
Abstract
Abstract Following how the electrical transistor revolutionized the field of electronics, the realization of an optical transistor in which the flow of light is controlled optically should open the long‐sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as an optical transistor. The light‐induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all‐optical logic circuits.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Perovskite Materials and Applications · Photorefractive and Nonlinear Optics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Université de Strasbourg CNRS Institut de Physique et Chimie des Matériaux de Strasbourg UMR 7504, 23 rue du Loess Strasbourg F‐67000 France
Institut für Experimentelle Physik TU Bergakademie Freiberg Leipziger Str. 23 Freiberg 09596 Germany
Max Planck Institut für Chemische Physik fester Stoffe Nöthnitzer Str. 40 01187 Dresden Germany
SPEC CEA CNRS Université Paris‐Saclay Gif‐sur‐Yvette 91191 France
Funding
Agence Nationale de la Recherche
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