Capacitance–Voltage (C–V ) Characterization of Graphene–Silicon Heterojunction Photodiodes
Source abstract
Abstract
Abstract Heterostructures of 2D and 3D materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, a method to analyze measured capacitance–voltage (C–V) data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors is introduced. The accurate extraction of the built‐in potential (Φbi) and the Schottky barrier height (SBH) from the measurement data independent of the Richardson constant is also demonstrated.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Nanowire Synthesis and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
RWTH Aachen University Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology Otto‐Blumenthal‐Str. 2 Aachen 52074 Germany
AMO GmbH Advanced Microelectronic Center Aachen (AMICA) Otto‐Blumenthal‐Str. 25 Aachen 52074 Germany
Funding
European Commission · Bundesministerium für Bildung und Frauen · H2020 Future and Emerging Technologies
References (39)
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