Gate Modulated High‐Performance Polarization‐Sensitive Photodiode Based on WSe₂/Ta₂Pd₃Se₈ Hybrid Dimensional Heterostructure

Abstract As an emerging research field, reconfigurable electronic and optoelectronic devices based on semiconducting van der Waals (vdW) heterostructures provide distinct advantages in dimension scaling, power consumption, multiple functionalities, and tunability, making it highly suitable for applications in integrated circuits, sensors, and intelligent system. In this work, a high‐performance reconfigurable photodiode based on a hybrid‐dimensional vdW heterostructure consisting of 2D WSe₂ and 1D Ta₂Pd₃Se₈ is proposed. Through gate control, the semiconducting junction is switched between p‐n and n‐n configurations, resulting in a switchable rectification behavior and highly tunable self‐powered photoresponse. Under visible light excitation, the device shows good responsivity reaching 6.01 A W⁻¹ and high external quantum efficiency (EQE) up to 1360%. Additionally, the 1D Ta₂Pd₃Se₈ nanowire introduces highly anisotropic crystal structure to the junction, enabling selective detection of linearly polarized light in the visible and near infrared range. This study demonstrates potential applications of reconfigurable hybrid‐dimensional vdW heterostructures in future electronic and optoelectronic devices.