Defect‐Induced Rashba Effect in Metal Halide Perovskite Thin Films Deposited on a Flexible Substrate
Source abstract
Abstract
Abstract Metal halide perovskites (MHPs) exhibit strong spin‐orbit coupling and structural inversion asymmetry, making them ideal for testbeds of Rashba effects and for use in spin‐related optoelectronic and spintronic applications. However, the Rashba band splitting is mainly observed in bulk MHPs so far and is rarely observed in thin films. In this study, a direct observation of Rashba band splitting in MHP thin films at room temperature is reported. By employing a silicone rubber substrate with a high thermal expansion coefficient, the out‐of‐plane tensile strain significantly reduces the activation energy of ion migration in these thin films and leads to a considerable amount of point defects. These point defects disrupt the inversion symmetry and ultimately give rise to the Rashba band splitting. These findings open up new possibilities for manipulating Rashba effects in MHP thin films through device engineering.
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Research context
OpenAlex topics: Perovskite Materials and Applications · Electronic and Structural Properties of Oxides · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Photoelectronic Engineering Ludong University Yantai Shandong 264025 China
Key Laboratory of Luminescence and Optical Information Ministry of Education School of Physical Science and Engineering Beijing Jiaotong University Beijing 100044 China
State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China
Funding
Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China
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