Enabling Low‐Noise, High‐Detectivity, Stable, and Flexible Perovskite Mesh Nanowire Photodetectors by Phenylethylamine Iodine Doping Strategy
Source abstract
Abstract
Abstract The poor stability, high noise, and low detectivity (D*) of perovskite mesh nanowire (PMN) photodetectors (PDs) seriously hinder their practical applications. Here, a phenylethylamine iodine doping strategy (PIDS) is introduced to solve these problems. The PIDS leads to the formation of 2D perovskite PEA2MAx‐1PbxI3x+1 (PEA = phenylethylamine, MA = methylamine) within MAPbI3 PMN, which not only prevents water and oxygen erosion to thwart PMN degradation but also inhibits the transport of dark state carriers to reduce dark current. As a result, the noise, D*, and stability of the PMN PD are simultaneously improved. The device exhibits low noise current (7.61 × 10−15 A Hz−1/2) and high D* of 3.2 × 1014 Jones, the highest D* value for PMN PDs reported to date. Moreover, the unpacked device sustains 100% of its initial performance after 2880 h of storage in the air (45–55% humidity), enabling it as the most stable MAPbI3 perovskite micro/nanostructure PD reported to date. Furthermore, the flexible device with PIDS exhibits comparable performance to that of the rigid device as well as great mechanical stability. Finally, the flexible device with PIDS demonstrates excellent optical imaging capability and a higher precision optical imaging potential than the commercial silicon photodiode S2386.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Ga2O3 and related materials · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International School of Microelectronics Dongguan University of Technology Dongguan 523808 P. R. China
Institute of Carbon Neutrality and New Energy School of Electronics and Information Hangzhou Dianzi University Hangzhou 310018 P. R. China
Hubei Yangtze Memory Laboratories Wuhan 430205 P. R. China
School of Microelectronics Hubei University Wuhan 430062 P. R. China
Funding
National Natural Science Foundation of China · Basic and Applied Basic Research Foundation of Guangdong Province
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